Dual path gas distribution device

ABSTRACT

An apparatus for deploying two fluids separately into a reaction chamber is provided. The apparatus includes a first distribution network that is formed on a plate having a distribution face and a dispensing face. The first distribution network is defined by a plurality of recessed channels on the distribution face. The plurality of recessed channels includes a plurality of thru-ports that extend from the plurality of recessed channels to the dispensing face. The apparatus further includes a second distribution network that has passages formed below the plurality of recessed channels and above the dispensing face. A first set of ports extends from the passages to the distribution face and a second set of ports extends from a top surface of the distribution face to the dispensing face.

PRIORITY CLAIM TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. patent applicationSer. No. 12/346,195 entitled “Dual Path Gas Distribution Device” filedon Dec. 30, 2008 which is incorporated herein by reference.

BACKGROUND

Combinatorial processing enables rapid evaluation of semiconductorprocessing operations. The systems supporting the combinatorialprocessing are flexible to accommodate the demands for running thedifferent processes either in parallel, serial or some combination ofthe two.

Some exemplary semiconductor processing operations includes operationsfor adding (depositions) and removing layers (etch), defining features,preparing layers (e.g., cleans), doping, etc. Similar processingtechniques apply to the manufacture of integrated circuit (IC)semiconductor devices, flat panel displays, optoelectronics devices,data storage devices, magneto electronic devices, magneto optic devices,packaged devices, and the like. As feature sizes continue to shrink,improvements, whether in materials, unit processes, or processsequences, are continually being sought for the deposition processes.However, semiconductor companies conduct research and development (R&D)on full wafer processing through the use of split lots, as thedeposition systems are designed to support this processing scheme. Thisapproach has resulted in ever escalating R&D costs and the inability toconduct extensive experimentation in a timely and cost effective manner.Combinatorial processing as applied to semiconductor manufacturingoperations enables multiple experiments to be performed on a singlesubstrate. Equipment for performing the combinatorial processing mustsupport the efficiency offered through the combinatorial processingoperations.

It is within this context that the invention arises.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention, together with further advantages thereof, may best beunderstood by reference to the following description taken inconjunction with the accompanying drawings.

FIG. 1A is a representation of an exemplary substrate processing systemin accordance with one embodiment of the present invention.

FIG. 1B is an exemplary view of a portion of a showerhead, in accordancewith one embodiment of the present invention.

FIGS. 2 and 2B are an exemplary view of portion of the gasket and thedistribution face of the showerhead, in accordance with one embodimentof the present invention.

FIG. 3 is an exemplary illustration of a portion of a showerhead whereboth the plate and the gasket are translucent in order to illustrate theinternal network, in accordance with one embodiment of the presentinvention.

FIGS. 4 and 4B are a perspective view of the plate of a portion of ashowerhead, in accordance with one embodiment of the present invention.

FIG. 5 is a perspective view of a translucent plate of a portion of ashowerhead illustrating the various internal pathways, in accordancewith one embodiment of the present invention.

FIG. 6 is a view of the distribution face and the internal networkwithin a portion of a showerhead, in accordance with one embodiment ofthe present invention.

FIG. 7 is a view of the dispensing face of a portion of a showerhead, inaccordance with one embodiment of the present invention.

FIG. 8 is a perspective view of the gasket for use with a portion of ashowerhead, in accordance with one embodiment of the present invention.

FIG. 9 is a simplified schematic diagram illustrating an overview of theHigh-Productivity Combinatorial (HPC) screening process for use inevaluating materials, unit processes, and process sequences for themanufacturing of semiconductor devices in accordance with one embodimentof the present invention.

FIG. 10 is an exemplary flow chart diagram illustrating a work flow forthe screening of a chalcogenide material in accordance with oneembodiment of the invention.

FIG. 11 illustrates an exemplary ternary plot that may be utilized forthe design of experiment, in accordance with one embodiment of thepresent invention.

DETAILED DESCRIPTION

The embodiments described herein provide for a High ProductivityCombinatorial (HPC) method and apparatus enabling combinatorialprocessing for Atomic Layer Deposition (ALD) operations. In oneembodiment, a showerhead providing separate pathways into a reactionzone prevents any pre-reaction of the chemistries within the showerheador upstream of the depositions region. In another embodiment, ashowerhead having multiple segments where each segment has differentgeometric properties for distributing multiple fluids used in an ALDprocess. The ALD process is performed on a substrate in a combinatorialfashion so various regions of the substrate are processed differently.These regions are then tested to determine the effectiveness of the ALDprocess. It will be apparent, however, to one skilled in the art, thatthe present invention may be practiced without some or all of thesespecific details. In other instances, well known process operations havenot been described in detail in order not to unnecessarily obscure thepresent invention.

The embodiments described below further provide details for amulti-region processing system and associated showerhead that enableprocessing a substrate in a combinatorial fashion. Thus, differentregions of the substrate may have different properties, which may be dueto variations of the materials, unit processes (e.g., processingconditions or parameters) and process sequences, etc. For someembodiments, within each region the conditions are preferablysubstantially uniform so as to mimic conventional full wafer processingwithin each region. However, useful results can be obtained for certainexperiments without this requirement. In one embodiment, the differentregions are isolated so that there is no inter-diffusion between thedifferent regions.

In addition, the combinatorial processing of the substrate may becombined with conventional processing techniques where substantially theentire substrate is uniformly processed (e.g., subjected to the samematerials, unit processes and process sequences). Thus, the embodimentsdescribed herein can pull a substrate from a manufacturing process flow,perform combinatorial processing and return the substrate to themanufacturing process flow for further processing. Alternatively, thesubstrate can be processed in an integrated tool that allows bothcombinatorial and conventional processing in various chambers attachedaround a central chamber or within a R&D facility such as a clean room.Consequently, in one substrate, information concerning the variedprocesses and the interaction of the varied processes with conventionalprocesses can be evaluated. Accordingly, a multitude of data isavailable from a single substrate for a desired process.

The embodiments described herein enable the application of combinatorialtechniques for process sequence integration of semiconductormanufacturing operations. Combinatorial processing applied tosemiconductor manufacturing operations assists in arriving at a globallyoptimal sequence of semiconductor manufacturing operations byconsidering interaction effects between the unit manufacturingoperations, the process sequence of the unit manufacturing operations,the process conditions used to effect such unit manufacturingoperations, as well as materials characteristics of components utilizedwithin the unit manufacturing operations. The embodiments describedbelow provide details for a multi-region processing system andassociated reaction chambers that enable processing a substrate in acombinatorial fashion. In one embodiment, the different regions areisolated (e.g., ‘site-isolated’) so that there is no interdiffusionbetween the different regions.

The embodiments are capable of analyzing a portion or subset of theoverall process sequence used to manufacture semiconductor devices. Oncethe subset of the process sequence is identified for analysis,combinatorial process sequence integration testing is performed tooptimize the materials, unit processes, and process sequences used tobuild that portion of the device or structure. According to someembodiments described herein, the processing may take place overstructures formed on the semiconductor substrate, which are equivalentto the structures formed during actual production of the semiconductordevice. For example, structures may include, but not be limited to,trenches, vias, interconnect lines, capping layers, masking layers,diodes, memory elements, gate stacks, transistors, or any other seriesof layers or unit processes that create a structure found onsemiconductor chips.

In some embodiments, while the combinatorial processing varies certainmaterials, unit processes, or process sequences, the composition orthickness of the layers or structures, or the action of the unit processis substantially uniform for each region. It should be noted that theprocess can be varied between regions, for example, a thickness of alayer is varied or one of various process parameters or conditions, suchas a voltage, flow rate, etc., may be varied between regions, as desiredby the design of the experiment. The result is a series of regions onthe substrate that contains structures or unit process sequences thathave been uniformly applied within that region and, as applicable,across different regions. This process uniformity allows comparison ofthe properties within and across the different regions such thatvariations and test results are due to the parameter being modified,e.g., materials, unit processes, unit process parameters, or processsequences, and not the lack of process uniformity. In essence, thecombinatorial processing performs semiconductor manufacturing operationson multiple regions of a substrate so that the multiple regions areprocessed differently to achieve different results. An application ofthe showerhead described herein with regard to combinatorial processingis further described with reference to FIGS. 9-11.

FIG. 1A is a representation of an exemplary substrate processing system10 in accordance with one embodiment of the present invention. Thesubstrate processing system 10 includes an enclosure that is formed froma process-compatible material that for simplicity and clarity is notshown. A processing chamber 16 and a vacuum lid assembly 20 cover anopening to processing chamber 16 and are located within the enclosure.Mounted to vacuum lid assembly 20 is a process fluid injection assemblythat delivers reactive and carrier fluids into processing chamber 16. Tothat end, the fluid injection assembly includes a plurality ofpassageways 30, 31, 32 and 33 and a showerhead portion 101. The vacuumlid assembly 20, and showerhead 90 may be maintained within desiredtemperature ranges in a conventional manner It should be appreciatedthat the Figures provided herein are illustrative and not necessarilydrawn to scale.

A heater/lift assembly 46 is disposed within processing chamber 16.Heater/lift assembly 46 includes a support pedestal 48 connected to asupport shaft 49. Support pedestal 48 is positioned between shaft 49 andvacuum lid assembly 20. Support pedestal 48 may be formed from anyprocess-compatible material, including aluminum nitride and aluminumoxide (Al₂O₃ or alumina) and is configured to hold a substrate thereon,e.g., support pedestal 48 may be a vacuum chuck or utilize otherconventional techniques such as an electrostatic chuck (ESC) or physicalclamping mechanisms. Heater lift assembly 46 is adapted to becontrollably moved so as to vary the distance between support pedestal48 and the showerhead 90 to control the substrate to showerhead spacing.A sensor (not shown) provides information concerning the position ofsupport pedestal 48 within processing chamber 16. Support pedestal 48can be used to heat the substrate through the use of heating elements(not shown) such as resistive heating elements embedded in the pedestalassembly.

A fluid supply system 69 is in fluid communication with passageways 30,31, 32 and 33 through a sequence of conduits. Flows of processingfluids, from fluid supply system 69, within processing chamber 16 areprovided, in part, by a pressure control system that may include one ormore pumps, such as turbo pump 64 and roughing pump 66 both of which arein fluid communication with processing chamber 16 via a butterfly valve67 and pump channel 68. Controller 70 regulates the operations of thevarious components of system 10. Controller 70 includes a processor 72in data communication with memory, such as random access memory 74 and ahard disk drive 76 and is in signal communication with pump system 64,temperature control system 52, fluid supply system 69 and various otheraspects of the system as required. System 10 may establish conditions ina region 77 of processing chamber 16 located proximate to a surface 78of a substrate 79 disposed on support pedestal 48 to form desiredmaterial thereon, such as a thin film. It should be appreciated thatprocessing chamber 16 is configured to create a peripheral flow channel71 that surrounds support pedestal 48 when placed in a processingposition to provide processing region 77 with the desired dimensionsbased upon chemical processes to be achieved by system 10. Pump channel68 is situated in housing 14 so that processing region 77 is positionedbetween pump channel 68 and showerhead portion 101.

The dimensions of peripheral flow channel 71 are defined to provide adesired conductance of processing fluids therethrough that provide flowsof processing fluids over a surface 78 of substrate 79 in asubstantially uniform manner and in an axi-symmetric fashion. In oneembodiment, the conductance through pump channel 68 is chosen to belarger than the conductance through peripheral flow channel 71. Itshould be noted that the processing chamber of FIG. 1A is one exemplaryprocessing chamber and the embodiments described herein may beincorporated into other processing chambers as desired.

FIG. 1B is an exemplary view of a showerhead portion 101, in accordancewith one embodiment of the present invention. The illustration shouldnot be perceived as inclusive as the showerhead portion 101 may includeadditional components. For simplicity and clarity, the gas distributionelements of the showerhead portion 101 include a plate 100 and a gasket102. In the embodiment shown in FIG. 1B the gasket 102 is rendered astranslucent so features on the plate 100 are visible. The plate 100 hasa distribution face 112 and on an opposing side from the distributionface 112 is a dispensing face 114. Formed on the distribution face 112is a plurality of channels 108 and an internal inlet 104. Channels 108are defined periodically at different radial lengths from a center ofthe showerhead along a depth of the surface of showerhead portion 101. Achannel extending radially from a center region of showerhead portion101 interconnects channels 108.

FIG. 1B shows a quarter of the showerhead portion 101 in this exemplaryembodiment. In other embodiments the showerhead portion 101 can be madeto be any portion of the showerhead, such as, but not limited to a half,a third, an eighth, etc. Similarly, the circular shape of the portion ofthe showerhead portion 101 should also not be considered limiting as theshowerhead portion 101 can be made to any shape. The multiple portionsof the showerhead may be supported through a nesting into which theportions are placed. One skilled in the art will appreciate that knownsupport techniques for the multiple portions may be utilized to supportthe showerhead portions on a top surface of the chamber.

When assembled, the gasket 102 is pressed onto the distribution face 112and isolates the channels 108 from the gasket network 110. The gasket102 includes a gasket opening 106 that is aligned with the channel 108and a gasket opening 116 that is aligned with the internal inlet 104.The gasket 102 further includes a gasket network 110. The gasket network110 includes a plurality of cutouts through the gasket 102 that arealigned with features on the plate 100 that will be described in furtherdetail below. In addition, the cutout shapes for gasket 102 areexemplary. That is, any suitable shape that isolates gasket network 110from channels 108 is acceptable.

In one exemplary embodiment, the plate 100 is formed from a materialsuch as aluminum with a thickness of about 8 millimeters. In otherembodiments, the plate 100 is formed from materials such as, but notlimited to steels and ceramics with thicknesses within a range of about4 millimeters to about 12 millimeters. In still other embodiment, theplate 100 is formed from materials that are non-reactive with processingfluids used within the processing system with a thickness that isdetermined based on the particular process fluids and the required flowrates of the process fluids.

FIG. 2 is an exemplary view of a portion of the gasket 102 and thedistribution face 112 of the showerhead portion 101, in accordance withone embodiment of the present invention. The gasket 102 has beenrendered as translucent so features on the plate 100 are visible. Inthis view, additional features on the distribution face 112 are visible.For example, channel thru-ports 202 are illustrated within the channel108. The channel thru-ports 202 extend from the distribution face 112 tothe dispensing face on the opposing side of showerhead 101. In oneembodiment, the channel thru-ports are about 0.4 millimeters indiameter. In other embodiments, the size of the thru-ports can rangebetween about 0.25 millimeters and about 2 millimeters. The gasketopening 106 allows a first fluid to be introduced within the channel108. With the gasket 102 in place, the first fluid is constrained toflow within the channel 108. The channel thru-ports 202 allow the firstfluid to flow from the channel 108 on the distribution face 112 to thedispensing face (not shown).

Another feature on the distribution face 112 is an internal network port200 that is associated with a plurality of internal network thru-ports200-1. The internal network thru-ports 200-1 extends from thedistribution face 112 to the dispensing face. In one embodiment, theinternal network ports 200 are connected to the internal inlet 104 by aninternal network (not shown) formed between the distribution face 112and the dispensing face. The combination of the internal network ports200 and the internal network thru-ports 200-1 allows a second fluid thatis supplied through the internal inlet 104 to be distributed across thedistribution face. Fluid introduced through the internal inlet 104 isrouted to the internal network ports 200 via the internal network asdescribed in more detail below. With the gasket 102 in place, fluidflowing from the internal network ports 200 is confined within thegasket network 110, and flows to the dispensing face via the internalnetwork thru-ports 200-1.

FIG. 3 is an exemplary illustration where both the plate 100 and thegasket 102 have been rendered as translucent in order to illustrate theinternal network 300, in accordance with one embodiment of the presentinvention. The illustrated embodiment of the internal network 300includes two passages 300-1 and 300-2 extending radially from theinternal inlet 104. In one embodiment, the passages 300-1 and 300-2 areabout 6 millimeters in diameter. In other embodiment, the diameter ofpassages 300-1 and 300-2 are within a range of about 3 millimeters toabout 8 millimeters. The configuration illustrated in FIG. 3 should notbe construed as limiting as other embodiments can have fewer oradditional passages. Furthermore, other embodiments can have theinternal inlet 104 placed at a different location or even includemultiple internal inlets 104 connected to multiple passages. Asillustrated, one gas or fluid is distributed into internal inlet 104from a fluid supply source into passages 300-1 and 300-2 and throughinternal network ports 200. As the gasket is sealed against a topsurface of the chamber, the fluid emanating from internal network ports200 flows into internal network thru-ports 200-1 into the reactionchamber or deposition region. In one embodiment, the internal networkports 200 are about 2 millimeters in diameter. In other embodiments, theinternal network ports 200 are formed with a diameter within a range ofabout 1 millimeter to about 4 millimeters. Similarly, in one embodiment,the internal network thru-ports 200-1 are about 0.4 millimeters indiameter. In other embodiments, the internal network thru-ports 200-1are formed with a diameter within a range of about 0.25 millimeter toabout 2 millimeters.

A second gas or fluid is distributed into opening 106 and into channels108. From channels 108, the fluid flows into channel thru ports 202 intothe reaction chamber or deposition region. Accordingly, the fluid flowsare isolated from each other to maintain purity of each fluid streamprior to reaching the deposition region. With regard to highly reactivecomponents, such as the precursors for metal oxides used withchalcogenide, the showerhead configuration described herein enables thecombinatorial deposition of components that cannot mix inline prior tothe deposition chamber.

FIG. 4 is a perspective view of the plate 100, in accordance with oneembodiment of the present invention. A plurality of channels are formedon the distribution face 112 of the plate 100 and distributes a firstfluid through network where the width of radial channels 108 a isdefined by dimension Y. Additionally, spacing between radial channels isdefined by dimension X and the radial channels are interconnected with adistribution channel 108 b defined by dimension Z. In the embodimentshown, the radial channels 108 a are equally spaced apart and have asame width. Likewise, the distribution channel 108 b is a uniform width.However, in other embodiments, the spacing between radial channels 108 amay vary, along with the width of the radial channels and the width ofthe distribution channel 108 b as shown in FIG. 4B. FIG. 4B illustratesthat the widths of radial channels 108 a may increase as the channelsare located farther from gasket opening 106. Furthermore, in otherembodiments, additional distribution channels 108 b can be included toprovide additional fluid distribution to radial channels 108 a.

While FIG. 4 shows the channel thru-ports 202 being uniform in size, thechannel thru-ports 202 can vary in size just as the dimensions of theradial channels 108 a can be varied. For example, the size of thechannel thru-ports 202 can be uniform within a radial channel 108 a.Alternatively, the size of the channel thru-ports 202 can increase asthe distance from the distribution channel 108 from internal inlet 104increases. Similarly, the size of the channel thru-ports 202 canincrease in proportion to the distance of a radial channel 108 a fromthe center of the plate 100. The ability to modify the physicalcharacteristics of the radial channels 108 a and the distributionchannel 108 b along with the thru-ports 202 is advantageous because itcan promote or restrict fluid flow to specific areas of the showerheadand thus the effects of varying the fluid flow can be evaluated in acombinatorial manner.

FIG. 5 is an exemplary perspective view with the plate 100 beingrendered as translucent, to illustrate the various internal pathways, inaccordance with one embodiment of the present invention. The channelthru-ports 202 are visible extending from a surface of the channel 108to a surface of the dispensing face 114. Similarly, the internal network300 is visible with passages 300-1 and 300-2 originating from internalinlet 104. Evenly spaced along the passages 300-1 and 300-2 are internalnetwork ports 200. The internal network ports 200 allow fluid to movefrom the passages 300-1 and 300-2 to the distribution face 112.Associated with each internal network port 200 are internal networkthru-ports 200-1. In one embodiment, the internal network port 200 andassociated internal network thru-ports 200-1 are arranged in radialgroups. When the gasket is present, fluid supplied to the distributionface 112 from the internal network ports 200 will be constrained withinthe radial groups by the gasket network and flow from the distributionface 112 to the dispensing face 114 via the internal network thru-ports200-1. Thus the path of the fluid from the passages 330-1 and 300-2proceed to a top surface of the showerhead and then over the top surfaceinto internal network thru-ports to the dispensing face of theshowerhead for introduction into the deposition chamber.

FIG. 6 is a view of the distribution face 112 and the radial groups 600of the internal network 300, in accordance with one embodiment of thepresent invention. The radial groups 600 are separated by a distance W.While FIG. 6 shows the radial groups 600 being evenly spaced apart,other embodiments can have varying spacing between the radial groupsand/or the ports within the radial groups. For example, in oneembodiment, as the radial groups get farther from the center, thedistance between the radial groups gets smaller. To promote evendistribution of fluids from both the internal network thru-ports 200-1and the channel thru-ports 202, the relative spacing of the respectiveradial channels 108 a and radial groups 600 may be altered. Asillustrated in FIG. 6, an alternating pattern of radial groups 600 andradial channels 108 a is provided for relative symmetry in fluiddistribution. However, in other embodiments, it may be advantageous tohave asymmetrical fluid distribution facilitated by a greater number ofradial channels 108 a than radial groups 600, or vice versa. Thus,varying configurations are capable within the embodiments describedherein.

It should be appreciated that changing the size of the internal networkports 200 or the internal network thru-ports 200-1 can modify fluiddistribution from the radial groups 600. For example, the size of theinternal network ports 200 can be proportional to the distance of theinternal network port 200 from the internal inlet 104 as shown in FIG.2B. FIG. 2B illustrates that the diameters of the internal network ports200 may increase as the channels are located farther from gasket opening106. Similarly, the size of the internal network thru-ports 200-1 canincrease proportional to the distance of the radial group 600 from theinternal inlet 104 as shown in FIG. 2B. FIG. 2B illustrates that thediameters of the internal network thru-ports 200-1 may increase as thechannels are located farther from gasket opening 106. In otherembodiments, the size of the internal network thru-ports 200-1 can bedifferent within the respective radial group 600. For example, the sizeof the internal network thru-ports 200-1 can increase in proportion tothe distance from the internal network port 200. Accordingly, oneskilled in the art will appreciate that numerous dimensions andconfigurations of the illustrated embodiments may be utilized to enhancethe combinatorial evaluation.

FIG. 7 is a view of the dispending face 114, in accordance with oneembodiment of the present invention. Highlighted on the dispensing face114 are exemplary radial groups 600 and radial channel 108 a. Within theradial groups 600, internal network thru-ports 200-1 are visible.Similarly, within the radial channels 108 a, channel thru-ports 202 arevisible. As previously discussed, various embodiments allow fordifferent spacing between the radial groups 600 and the radial channels108 a. Similarly, different embodiments allow for varying size ofchannel thru-ports 202 and internal network thru-ports 200-1.Furthermore, other embodiments vary the size of the segment of theshowerhead. In yet other embodiments, thru ports 200-1 and 202 may bedistributed differently for evaluation of the distribution on theresulting deposited layer.

FIG. 8 is a perspective view of the gasket 102, in accordance with oneembodiment of the present invention. The gasket 102 has a plate sealsurface 800 that is placed in contact with the distribution face of theplate. When installed in contact with the plate, gasket opening 116 isaligned with the internal inlet while the gasket opening 106 is alignedwith the channel 108. The gasket network 110 is configured to align withthe radial groups 600 and contain fluid flow from the internal networkports to the internal network thru-ports. In one embodiment, the gasket102 is formed from a non-reactive material that is more compliant thatthe mating surface of the plate. Exemplary materials for the gasketinclude, but are not limited to, polytetrafluoroethylene (PTFE) orpolyamide based polymers such as Vespel. In an exemplary embodiment, thegasket 102 is formed from Vespel with a thickness of about 3millimeters. In other embodiments, the gasket 102 is formed from amaterial within a thickness range of about 1.5 millimeters to about 5millimeters.

FIG. 9 is a simplified schematic diagram illustrating an overview of theHigh-Productivity Combinatorial (HPC) screening process for use inevaluating materials, unit processes, and process sequences for themanufacturing of semiconductor devices incorporating chalcogenidematerials in accordance with on embodiment of the invention. Thematerials utilized for the chalcogenide atomic layer deposition processinclude materials that are highly reactive and need to be segregatedprior to the entrance into the deposition chamber. Thus, the showerheaddescribed herein may be employed with this process as provided below forporting at least two separate components that distribute the at leasttwo individually separate fluid sources over a quadrant, or otherportion, of substrate, in support of the HPC method of partitioneddeposition. As illustrated in FIG. 9, primary screening incorporates andfocuses on chalcogenide materials discovery in one embodiment. Here, thematerials may be screened for certain properties in order to select asubset of possible candidates for a secondary level of screening, whichwill look at materials and unit processes development and processintegration. Thereafter, tertiary screening further narrows thesecandidates through process integration and device qualification in orderto identify possible optimizations in terms of materials, unit processesand process sequence integration.

The time required to perform this type of screening will vary, however,the efficiencies gained through the HPC methods provide a much fasterdevelopment system than any conventional technique or scheme. Whilethese stages are defined as primary second and tertiary, these arearbitrary labels placed on these steps. Furthermore, primary screeningis not necessarily limited to materials research and can be focused onunit processes or process sequences, but generally involves a simplersubstrate, less steps and quicker testing than the later screeninglevels.

The stages also may overlap and there may be feedback from the secondaryto the primary, and the tertiary to the secondary and/or the primary tofurther optimize the selection of materials, unit processes and processsequences. In this manner, the secondary screening begins while primaryscreening is still being completed, and/or while additional primaryscreening candidates are generated, and tertiary screening can beginonce a reasonable set of options are identified from the secondaryscreening. Thus, the screening operations can be pipelined in oneembodiment. As a general matter and as discussed elsewhere in moredetail, the level of sophistication of the structures, processsequences, and testing increases with each level of screening.Furthermore, once the set of materials, unit processes and processsequences are identified through tertiary screening, they must beintegrated into the overall manufacturing process and qualified forproduction, which can be viewed as quaternary screening or productionqualification. In one more level of abstraction, a wafer can be pulledfrom the production process, combinatorially processed, and returned tothe production process under tertiary and/or quaternary screening.

FIG. 10 is an exemplary flow chart diagram illustrating a work flow forthe screening of process development in accordance with one embodimentof the invention. In operation 1000, a design of experiment is set up.In one embodiment, a ternary plot of a material property providesinformation on various compositions for the design of experiment. FIG.11 illustrates an exemplary ternary plot that may be utilized for thedesign of experiment, in accordance with one embodiment of the presentinvention. Tie line 1100 represents a line that crosses the ternary plotof FIG. 11 between two binary states of material properties. In oneembodiment, different compositions along tie line 1100 may be utilizedto develop the compositions for site isolated regions on a substrate.One skilled in the art will appreciate that while a single tie line isillustrated here, this is not meant to be limiting. That is, multipletie lines may be used in order to derive compositions to becombinatorially deposited in a site isolated manner on a substrate fortesting. The compositions deposited on a substrate may come from asingle tie line or multiple tie lines. Alternatively, the compositionsmay be randomly generated from a ternary plot. The compositions for thematerial listed in the ternary plot of FIG. 11 may be highly reactiveand need to be isolated from each other prior to introduction into thedeposition chamber. In one embodiment, a reactive combination is silaneand oxygen. In another embodiment, trimethylaluminum (TMA) andoxygen/ozone are another reactive combination that can benefit fromseparation. Generally speaking, most reactants that are oxidized canbenefit from separation from the oxidizer to prevent pre-reaction andany resultant particle generation.

In other embodiments, the design of experiment can include variousdesigns of showerhead portions. For example, various showerhead portionscan have different thru-hole sizes, or channel widths. Alternatively,the showerhead portions can also vary the distances between radialchannels and radial groups. In still other design of experiments, thethru-hole sizes and channel widths can vary within one showerheadportion along with the distances between radial channels and radialgroups. In still other embodiments, various different fluid combinationsare passed through a variety of showerhead portions of differentdesigns.

Returning to FIG. 10, in operation 1002, site isolated depositions ofdifferent compositions are provided onto a surface of a substrate with ashowerhead composed of sections with various design configurations. Itshould be appreciated that the High Productivity Combinatorial (HPC)deposition tools owned by the assignee may be utilized to deposit thematerial onto a substrate in a site isolated fashion. The compositionfor each site isolated region may be selected based on a ternary plotfor a design of experiment in one embodiment. Depositing the material ina combinatorial manner may include varying one or more of unitprocesses, process sequences, and materials. For example, in additionto, or alternatively to, varying the composition of the materialproperties deposited between the regions, the thickness of the layer ofmaterial may vary. Numerous other parameters may be varied under thecombinatorial processing and the exemplary parameters discussed are notmeant to be limiting. One skilled in the art will appreciate that withineach region, the composition is deposited in a substantially uniformmanner. In one embodiment, the depositing is performed through ashowerhead having isolated distribution networks for a plurality offluids as described herein. In this embodiment, the plurality of fluidsflow through the isolated distribution networks and one of the fluids isdispensed from a top surface of the showerhead prior to exiting from abottom surface of the showerhead.

In operation 1004, the results of the material deposited on the siteisolated regions are characterized. Based on the design of experiment,the characterizations can include, but are not limited to electricalresistance, thickness of the deposition, and uniformity of the thicknessof the deposition across the entire site isolated region. Operation 1006selects a subset of the various design configurations for furthertesting based on the analysis of the characterizations in light of thedesign of experiment.

It should be appreciated that the embodiments described herein providefor a showerhead that isolates a plurality of fluids from each otherwhile flowing into a deposition chamber. In the embodiments describedabove, reactive gases utilized for the deposition of films on asubstrate proceed through the showerhead through separate pathways. Amating gasket provides the means for isolating the plurality of flows inone embodiment. Thus, the embodiments support a combinatorial processproviding partitioned deposition in one embodiment. In anotherembodiment, the lack of large volumes within the distribution pathwaypermits quick purging, helping to make fast transitions from reactantrich gas stream to an inert gas stream. One skilled in the art willappreciate that the patterns of holes on the showerhead may beinterlaced as described above or distributed differently to evaluatedifferent distribution patterns on a combinatorially processedsubstrate. In addition, the exemplary thicknesses, diameters, andmaterials of construction listed herein are not meant to be limiting.That is, the dimensions are provided for illustrative and exemplarypurposes and may vary based on the application for which the showerheadis being utilized.

Any of the operations described herein that form part of the inventionare useful machine operations. The invention also relates to a device oran apparatus for performing these operations. The apparatus can bespecially constructed for the required purpose, or the apparatus can bea general-purpose computer selectively activated or configured by acomputer program stored in the computer. In particular, variousgeneral-purpose machines can be used with computer programs written inaccordance with the teachings herein, or it may be more convenient toconstruct a more specialized apparatus to perform the requiredoperations.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications may be practiced within the scope of theappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the invention is notto be limited to the details given herein, but may be modified withinthe scope and equivalents of the appended claims.

1. A method for distributing gases for a deposition process, comprising: providing a showerhead having a plurality of segments, each of the segments comprising a plate, wherein each plate has a distribution face and an opposing dispensing face, wherein the distribution face comprises a plurality of channels formed therein; each of the channels having a plurality of channel thru-ports extending from the channel to the dispensing face of the plate; wherein each plate further comprises a gasket pressed onto the distribution face, wherein the gasket comprises a plurality of cut-outs through the gasket forming a gasket network; wherein each plate further comprising an internal network, the internal network comprising passages formed below the plurality of channels and above the dispensing face, a first set of internal network ports extending from the passages to the distribution face and a second set of internal network thru-ports extending from a top surface of the distribution face to the dispensing face; wherein the set of internal network ports and the set of internal network thru-ports align with the gasket network; flowing a first gas through the plurality of channels; and concurrent with flowing the first gas, flowing a second gas through the gasket network.
 2. The method as described in claim 1, further comprising: maintaining isolation of the first and the second gas during the flowing of the first gas through the plurality of channels of the at least one segment and the flowing of the second gas through the gasket network of the at least one segment.
 3. The method as described in claim 2, wherein the first gas flows both radially and axially through the channels.
 4. The method as described in claim 1, wherein the number of segments in the showerhead is four.
 5. The method as described in claim 1, wherein different materials are deposited in each segment of the showerhead.
 6. The method as described in claim 1, wherein one or more of unit processes, process sequences, materials, or thickness is varied in a combinatorial manner between the segments of the showerhead. 